SELECTIVELY DOPED SEMICONDUCTOR HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
GOSSARD, AC [1 ]
WIEGMANN, W [1 ]
DINGLE, R [1 ]
STORMER, HL [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C122 / C122
页数：1
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