THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES

被引：125
作者：
HUNG, CS
GLIESSMAN, JR
机构：
来源：
PHYSICAL REVIEW | 1950年 / 79卷 / 04期
关键词：
D O I：
10.1103/PhysRev.79.726
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：726 / 727
页数：2
相关论文
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[2]   THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J].
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[3]   CORRECTION [J].
JOHNSON, V .
PHYSICAL REVIEW, 1947, 71 (12) :909-909
[4]   TRANSITION FROM CLASSICAL TO QUANTUM STATISTICS IN GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURE [J].
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LARKHOROVITZ, K .
PHYSICAL REVIEW, 1947, 71 (06) :374-375
[5]   THEORETICAL HALL COEFFICIENT EXPRESSIONS FOR IMPURITY SEMICONDUCTORS [J].
JOHNSON, VA ;
LARKHOROVITZ, K .
PHYSICAL REVIEW, 1950, 79 (01) :176-177
[6]  
JOHNSON VA, 1947, PHYS REV, V72, P531
[7]  
LARKHOROVITZ K, 1945, NDRC14585 CONTR FIN, P33
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