IMPROVEMENT OF HARDNESS OF MOS CAPACITORS TO ELECTRON-BEAM IRRADIATION AND HOT-ELECTRON INJECTION BY ULTRA-DRY OXIDATION OF SILICON

被引：15

作者：

HARUTA, R ^{[1
]}

OHJI, Y ^{[1
]}

NISHIOKA, Y ^{[1
]}

YOSHIDA, I ^{[1
]}

MUKAI, K ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 01期

关键词：

D O I：

10.1109/55.31671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 29

页数：3

共 10 条

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