PHOTOELECTRONIC PROPERTIES OF LOW-TEMPERATURE GAAS GROWN ON SILICON AND GAAS SUBSTRATES BY MBE

被引：3
|
作者：
MARIELLA, RP
MORSE, JD
AINES, R
HUNT, CE
机构：
来源：
III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES | 1989年 / 145卷
关键词：
D O I：
10.1557/PROC-145-325
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：325 / 329
页数：5
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