SIDEGATING EFFECTS IN INVERTED ALGAAS/GAAS HEMT

被引：0

作者：

FUJISHIRO, HI

SAITO, T

NISHI, S

SANO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 09期

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O59 [应用物理学];

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引用

页码：L1742 / L1745

页数：4

共 9 条

[1] REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :97-99

[2]

FUJISHIRO HI, 1988, 14TH P INT S GALL AR, P653

[3] SURFACE ELECTRICAL BREAKDOWN WITH WHITE-LIGHT EMISSION ON SEMI-INSULATING GAAS SUBSTRATES [J].

HASEGAWA, H ;

KITAGAWA, T ;

SAWADA, T ;

OHNO, H .

ELECTRONICS LETTERS, 1984, 20 (13) :561-562

[4]

INOKUCHI K, 1987, 1987 IEEE GAAS IC S, P117

[5]

MIERS TH, 1983, 10TH P INT S GALL AR, P339

[6]

NISHI S, 1987, 13TH P INT S GALL AR, P515

[7] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J].

TIHANYI, J ;

SCHLOTTERER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1017-1023

[8] NEW, DEEP UV RESIST (LMR) FOR LIFT-OFF TECHNIQUE [J].

YAMASHITA, Y ;

KAWAZU, R ;

KAWAMURA, K ;

OHNO, S ;

ASANO, T ;

KOBAYASHI, K ;

NAGAMATSU, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :314-318

[9]

ZEGHBROECK BJV, 1987, IEEE ELECTRON DEVICE, V8, P188

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