TRAP GENERATION AT SI/SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION

被引：13

作者：

LING, CH

机构：

[1] Department of Electrical Engineering, National University of Singapore, Kent Ridge

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed to trap generation at S/SiO2 interface, proposed to be due to the breaking of Si-H bonds.

引用

页码：581 / 583

页数：3

共 50 条

[31] Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface
Varghese, D
Mahapatra, S
Alam, MA
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) : 572 - 574
[32] Magnetoresistance mobility extraction on TiN/HfO2/SiO2 metal-oxide-semiconductor field effect transistors
Thevenod, L.
Casse, M.
Desrat, W.
Mouis, M.
Reimbold, G.
Maude, D. K.
Boulanger, F.
APPLIED PHYSICS LETTERS, 2007, 90 (15)
[33] GENERATION AND RELAXATION PHENOMENA OF POSITIVE CHARGE AND INTERFACE-TRAP IN A METAL-OXIDE-SEMICONDUCTOR STRUCTURE
KHOSRU, QDM
YASUDA, N
TANIGUCHI, K
HAMAGUCHI, C
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4494 - 4503
[34] Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal-oxide-semiconductor structures
Chen, MJ
Lin, CF
Liu, WT
Chang, ST
Liu, CW
JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 323 - 326
[35] Effects of fluorine and chlorine on the gate oxide integrity of W/TiN/SiO2/Si metal-oxide-semiconductor structure
Park, DG
Kim, TK
THIN SOLID FILMS, 2005, 483 (1-2) : 232 - 238
[36] REDUCTION OF MOBILE PT ION DENSITY IN SIO2 AND SI-SIO2 INTERFACE STATE DENSITY IN PT-DIFFUSED METAL-OXIDE-SEMICONDUCTOR STRUCTURES
DENG, B
SHU, C
KUWANO, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7B): : L879 - L882
[37] Reduction of mobile Pt ion density in SiO2 and Si-SiO2 interface state density in Pt-diffused metal-oxide-semiconductor structures
Deng, Bei
Shu, Chang
Kuwano, Hiroshi
Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (7 B):
[38] Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal-oxide-semiconductor system
Lai, PT
Chakraborty, S
Chan, CL
Cheng, YC
APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3744 - 3746
[39] Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC
Pitthan, E.
dos Reis, R.
Correa, S. A.
Schmeisser, D.
Boudinov, H. I.
Stedile, F. C.
JOURNAL OF APPLIED PHYSICS, 2016, 119 (02)
[40] Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiation
Ling, CH
Cheng, ZY
ELECTRONICS LETTERS, 1997, 33 (01) : 104 - 105

← 1 2 3 4 5 →