TRAP GENERATION AT SI/SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION

被引：13

作者：

LING, CH

机构：

[1] Department of Electrical Engineering, National University of Singapore, Kent Ridge

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed to trap generation at S/SiO2 interface, proposed to be due to the breaking of Si-H bonds.

引用

页码：581 / 583

页数：3

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