TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION

被引：40

作者：

DELESCLUSE, P

LAVIRON, M

CHAPLART, J

DELAGEBEAUDEUF, D

LINH, NT

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 10期

关键词：

D O I：

10.1049/el:19810242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：342 / 344

页数：3

共 8 条

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[2]

DELAGEBEAUDEUF D, UNPUBLISHED

[3]

DELESCLUSE P, 1981, WOCSEMMAD81

[4] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE [J].

HIYAMIZU, S ;

MIMURA, T ;

FUJII, T ;

NANB, K .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :805-807

[5]

Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[6] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[7] HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1033-1035

[8]

WITKOWSKI LC, 1980, ELECTRON LETT, V16, P667

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