MICROSECOND LIFETIMES AND LOW INTERFACE RECOMBINATION VELOCITIES IN MODERATELY DOPED N-GAAS THIN-FILMS

被引：25

作者：

LUSH, GB

MELLOCH, MR

LUNDSTROM, MS

LEVI, DH

AHRENKIEL, RK

MACMILLAN, HF

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

[2] VARIAN RES CTR,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed lifetimes greater than 1 mus in moderately doped, thin film, n-GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the substrate. We attribute these ultralong lifetimes to enhanced photon recycling caused by the removal of the substrate. Nonradiative recombination in the bulk and at the interfaces is very low; the upper limit of the interface recombination velocity is 25 cm/s. Such long lifetimes in GaAs doped at N(D) = 1.3 X 10(17) cm-3 suggest that thin-film solar cells offer a potential option for achieving very high efficiencies.

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页码：2440 / 2442

页数：3

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