FORMATION OF CUBIC BORON-NITRIDE FILM ON SI WITH BORON BUFFER LAYERS

The c-BN (cubic BN)/BNX/B/Si structure was formed using plasma CVD techniques. In contrast with the direct growth of c-BN films, the adherence of the structure on Si was entirely satisfactory. The characterization of buffer layers (BN(X=0.6), BN(X=0.3), B) by X-ray photoelectron, infrared absorption spectroscopies and internal stress measurements show that the c-BN/BNX/B/Si structure is useful as a mechanically stable passivation film. © 1990 The Japan Society of Applied Physics.