METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS

被引：164

作者：

FAN, JF

OIGAWA, H

NANNICHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2125 / L2127

页数：3

共 9 条

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