ANOMALOUS MAGNETOCONDUCTANCE IN SILICON SURFACES

被引:22
作者
TANSAL, S
FOWLER, AB
COTELLESSA, RF
机构
[1] IBM Watson Research Center, Yorktown Heights
[2] New York University, New York, NY
来源
PHYSICAL REVIEW | 1969年 / 178卷 / 03期
关键词
D O I
10.1103/PhysRev.178.1326
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of a tangential magnetic field on the surface transport properties of silicon has been studied at low temperatures. An anomalous variation in conductance, with δGG0>1 and negative magnetoresistance, has been observed in samples with bulk resistivities in excess of 100 Ω cm. © 1969 The American Physical Society.
引用
收藏
页码:1326 / +
页数:1
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