DEFECT CENTERS IN GAAS PRODUCED BY CU DIFFUSION

被引：20

作者：

FULLER, CS

WOLFSTIR.KB

ALLISON, HW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4339 / &

共 25 条

[1] DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS [J].

ALLISON, HW ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2519-&

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3] RADIATIVE TRANSITIONS IN SEMICONDUCTORS [J].

BRAUNSTEIN, R .

PHYSICAL REVIEW, 1955, 99 (06) :1892-1893

[4]

BROOKS MS, 1962, ULTRAPURIFICATION ED, P334

[5]

BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062

[6] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].

BUBE, RH ;

MACDONALD, HE .

PHYSICAL REVIEW, 1962, 128 (05) :2071-&

[7] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J].

CHAKRAVERTY, BK ;

DREYFUS, RW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :631-+

[8] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E) [J].

CUSANO, DA ;

CARLSON, RO ;

FENNER, GE .

APPLIED PHYSICS LETTERS, 1964, 5 (07) :144-&

[9] DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E [J].

FULLER, CS ;

ALLISON, HW ;

WOLFSTIRN, KB .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :48-&

[10] CU-DOUBLING EFFECT IN GALLIUM ARSENIDE [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1889-+

← 1 2 3 →