SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS

被引：24

作者：

LAU, SS ^{[1
]}

LIAU, ZL ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

THIN SOLID FILMS | 1977年 / 47卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90046-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：313 / 322

页数：10

共 40 条

[1]

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[2]

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[3]

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[4] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J].

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[5] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

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COE, DJ ;

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[8] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J].

CSEPREGI, L ;

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MAYER, JW ;

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[9] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

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SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[10] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

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