ADVANCES IN BLUE LASER-DIODES

被引：49

作者：

ISHIBASHI, A

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90890-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have demonstrated the feasibility of ZnMgSSe as cladding layers for blue and blue-green laser diodes. The ZnMgSSe, fully lattice-matched to GaAs substrates, suppresses carrier overflow with its large energy-gap having type I heterostructure with Zn(S)Se. This has led to a successful demonstration of room temperature pulsed operation of a blue laser diode with a wavelength of 498.5 nm and room temperature CW operation of a 523.5 nm blue-green laser diode with a threshold current of 45 mA, based on a ZnCdSe/ZnSe/ZnMgSSe SCH structure.

引用

页码：677 / 685

页数：9

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