We have demonstrated the feasibility of ZnMgSSe as cladding layers for blue and blue-green laser diodes. The ZnMgSSe, fully lattice-matched to GaAs substrates, suppresses carrier overflow with its large energy-gap having type I heterostructure with Zn(S)Se. This has led to a successful demonstration of room temperature pulsed operation of a blue laser diode with a wavelength of 498.5 nm and room temperature CW operation of a 523.5 nm blue-green laser diode with a threshold current of 45 mA, based on a ZnCdSe/ZnSe/ZnMgSSe SCH structure.