ULTRA-HIGH-RESOLUTION HVEM (H-1500) NEWLY CONSTRUCTED AT NIRIM .2. APPLICATION TO MATERIALS

被引：28

作者：

HORIUCHI, S ^{[1
]}

MATSUI, Y ^{[1
]}

KITAMI, Y ^{[1
]}

YOKOYAMA, M ^{[1
]}

SUEHARA, S ^{[1
]}

WU, XJ ^{[1
]}

MATSUI, I ^{[1
]}

KATSUTA, T ^{[1
]}

机构：

[1] HITACHI LTD,NAKA WORKS,IBARAKI 312,JAPAN

来源：

ULTRAMICROSCOPY | 1991年 / 39卷 / 1-4期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1016/0304-3991(91)90202-H

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We have recently constructed an ultra-high-resolution HVEM (H-1500), whose specifications are introduced in part I of this series. The point-to-point resolving power of the microscope is 1.0 angstrom at an accelerating voltage of 1300 kV and 1.25 angstrom at 1000 kV. Using the microscope at 1000 kV we have succeeded in imaging clearly not only Zr atoms but also oxygen atoms in zirconia (ZrO2). The contrast of oxygen atoms in a high-T(c) superconductor YBa2Cu3O7-x is locally discriminated from that of cations in the image. A real structure image of Si [110] incidence is obtained at 1300 kV with a dark contrast at the Si atom sites and then used to analyze the structure at an initial stage of the damage due to electron irradiation.

引用

页码：231 / 237

页数：7

共 13 条

[1]

FUJITA H, 1986, 11TH P INT C EM KYOT, P909

[2] HIGH-RESOLUTION LATTICE IMAGE OF NB12O29 BY MEANS OF A HIGH-VOLTAGE ELECTRON-MICROSCOPE NEWLY CONSTRUCTED [J].