Bi2Se3 topological insulator quantum wires

被引:0
作者
Nikolic, A. [1 ]
Barnes, C. H. W. [1 ]
机构
[1] Univ Cambridge, Dept Phys, Cavendish Lab, Cambridge CB3 0HE, England
来源
JOURNAL OF PHYSICS COMMUNICATIONS | 2018年 / 2卷 / 09期
基金
英国工程与自然科学研究理事会;
关键词
topological insulators; 2D; 4 band model; ballistic conduction; bismuth selenide; finite difference;
D O I
10.1088/2399-6528/aad9ec
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the effect of 3D topological insulator contributions to the band structure and wavefunctions of quasi-one-dimensional electron systems. Our model for this system consists of an effective Hamiltonian derived previously in the literature from the crystal symmetries of Bi2Se3. We find that in wires whose face lies in the plane formed by they and z crystal directions and whose width is around 25 quintuple layers or more, the bands nearest to the gap are non-monotonic; we show that this has implications for the conductance of the wire. In addition, we observed increasing penetration depth of surface states with increasing wavenumber of the propagating mode. We believe these results have qualitative relevance to the family of 3D topological insulators whose crystal structure is characterised by the space group D-3d(5), and that the work done here contributes to the wider field of the study of conductance in topological insulators.
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页数:14
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