ALGAAS/GAINAS STRAINED-BASE PNP HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5

作者：

HILL, DG

LEE, WS

MA, T

HARRIS, JS

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 15期

关键词：

D O I：

10.1049/el:19890664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：993 / 995

页数：3

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[1] HETEROJUNCTION BIPOLAR-TRANSISTOR USING PSEUDOMORPHIC GAINAS FOR THE BASE
ENQUIST, PM
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[2] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
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[3] TWO-DIMENSIONAL ANALYSIS OF EMITTER-SIZE EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 721 - 725
[4] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE
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ISHIBASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05): : L421 - L424
[5] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 839 - 841
[6] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY
SULLIVAN, GJ
ASBECK, PM
CHANG, MF
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[J]. ELECTRONICS LETTERS, 1986, 22 (08) : 419 - 421
[7] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED
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DAPKUS, PD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 367 - 377