MEASUREMENT OF CONTACT RESISTANCE BETWEEN METAL AND DIFFUSION LAYER IN SI PLANAR ELEMENTS

被引:47
作者
MURRMANN, H
WIDMANN, D
机构
[1] Siemens AG, Werk für Halbleiter, München
关键词
D O I
10.1016/0038-1101(69)90045-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A structure is described for the measurement of contact-resistance between metal and diffusion-layer in Si planar-elements. Basic considerations and mathematical analysis for linear and concentric arrangement of contacts are presented with first experimental results. © 1969.
引用
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页码:879 / &
相关论文
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