EARLY VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：4

作者：

JAHAN, MM

ANWAR, AFM

机构：

[1] Department of Electrical and Systems Engineering, The University of Connecticut, Storrs

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 11期

关键词：

D O I：

10.1109/16.469414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Early voltage For abrupt double heterojunction bipolar transistors (DHBT's) has been calculated by using an effective junction velocity (S-c) at the base-collector heterojunction. S-c is obtained by self-consistently partitioning thermionic and quantum mechanical tunneling currents. Unlike single heterojunction bipolar transistors (SHBT's), the Early voltage varies very rapidly at low reverse bias and approaches the SHBT-limit at sufficiently high reverse bias. This is attributed to the presence of energy barrier at the b-c heterojunction.

引用

页码：2028 / 2029

页数：2

共 6 条

[1]

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[2] PERFORMANCE CAPABILITIES OF HBT DEVICES AND CIRCUITS FOR SATELLITE COMMUNICATION [J].