HOPPING CONDUCTION IN COPPER INDIUM DISELENIDE

被引：13

作者：

ESSALEH, L ^{[1
]}

WASIM, SM ^{[1
]}

GALIBERT, J ^{[1
]}

LEOTIN, J ^{[1
]}

PERRIER, P ^{[1
]}

ASKENAZY, S ^{[1
]}

机构：

[1] UNIV LOS ANDES,FAC CIENCIAS,CTR ESTUDIOS SEMICOND,MERIDA 5101,VENEZUELA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 65卷 / 04期

关键词：

D O I：

10.1080/13642819208204924

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical conduction by the variable-range-hopping mechanism has been observed in n-type CuInSe2 between 2 and 20 K and the effect of magnetic field on the parameters of Mott's law rho = rho(0) exp [(T0/T)s] studied. The variations in rho(0), T0 and s with magnetic field, and hence the magnetoresistance itself, are attributed to two opposing mechanisms and are analysed in the light of existing models.

引用

页码：843 / 848

页数：6

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