SPECTRAL RESPONSE OF METAL-AMORPHOUS SILICON BARRIERS AND HOLE DRIFT MOBILITY

被引：4

作者：

BASSET, R

VIKTOROVITCH, P

机构：

[1] Laboratoire de Physique Des Composants À Semiconducteurs, E.R.A. C.N.R.S. N° 659, Ecole Nationale Supérieure D'electronique Et de Radioélectricité, Grenoble

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 02期

关键词：

D O I：

10.1002/pssa.2210560210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spectral response of Schottky diodes made on sputtered hydrogenated amorphous silicon is investigated. Measurements are performed for different photon fluxes. From these experiments the hole drift mobility is deduced to μdh = 1.5 × 10−5 cm2 V−1 s−1. Under illumination the diode characteristic seems to be improved: both the ideality factor and the saturation current are found to be lower under light than in the dark. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：495 / 499

页数：5

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