CONTROL OF EPITAXIAL ORIENTATION OF SI ON COSI2(111)

被引：41

作者：

TUNG, RT

BATSTONE, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1611 / 1613

页数：3

共 29 条

[1]

BATSTONE JL, UNPUB

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[3] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J].

CHAMBERS, SA ;

ANDERSON, SB ;

CHEN, HW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 34 (02) :913-920

[4] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[5] STRUCTURAL-ANALYSIS OF AN SI/COSI2/SI HETEROSTRUCTURE USING ULTRAHIGH RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

DANTERROCHES, C ;

DAVITAYA, FA .

THIN SOLID FILMS, 1986, 137 (02) :351-361

[6]

DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770

[7] STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS [J].

FISCHER, AEMJ ;

VLIEG, E ;

VANDERVEEN, JF ;

CLAUSNITZER, M ;

MATERLIK, G .

PHYSICAL REVIEW B, 1987, 36 (09) :4769-4773

[8]

GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[9] NEW SILICIDE INTERFACE MODEL FROM STRUCTURAL ENERGY CALCULATIONS [J].

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1988, 60 (04) :313-316

[10]

HELLMAN F, IN PRESS PHYS REV B

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