PLASMA EDGE MODIFICATION IN STRONGLY COMPENSATED SEMICONDUCTORS

被引：1
|
作者：
SZUSZKIEWICZ, W
DYBKO, K
BARDYSZEWSKI, W
JULIEN, C
机构：
[1] UNIV WARSAW,INST THEORET PHYS,PL-00681 WARSAW,POLAND
[2] UNIV PARIS 06,PHYS SOLIDES LAB,F-75252 PARIS 05,FRANCE
来源：
ACTA PHYSICA POLONICA A | 1995年 / 88卷 / 05期
关键词：
D O I：
10.12693/APhysPolA.88.1048
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg1-xCoxSe for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.
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页码：1048 / 1052
页数：5
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