A DETAILED RAMAN-STUDY OF POROUS SILICON

被引：93

作者：

MUNDER, H ^{[1
]}

ANDRZEJAK, C ^{[1
]}

BERGER, MG ^{[1
]}

KLEMRADT, U ^{[1
]}

LUTH, H ^{[1
]}

HERINO, R ^{[1
]}

LIGEON, M ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER GRENOBLE I,SPECTROMETR PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

THIN SOLID FILMS | 1992年 / 221卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90791-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon layers formed on p-doped substrates with different doping levels were studied by Raman spectroscopy. The porosity of the samples varied between 36% and 65%. One set of samples had been preoxidized. The presence of nanocrystals in the porous film was clearly observed by an asymmetric broadening of the optical silicon phonon in the Raman spectra. The diameters of the nanocrystals were obtained by a detailed line shape analysis of the phonon Raman peak. With increasing porosity the amount of small nanocrystals increased compared with the amount of those with diameters larger than 35 angstrom. Furthermore, changes are observed in the multiphonon regime which are due to surface-assisted multiphonon processes which are enhanced in porous films.

引用

页码：27 / 33

页数：7