DIAMOND LAYERS DEPOSITED FROM IMPULSE PLASMA

Layers were deposited onto unheated substrates, from C+ and C2+ plasmoids emitted by a coaxial accelerator. X-ray and electron diffraction investigations revealed short-range ordering of sigma-sp3 type. The value of the band gap E(g) of 3.8 eV, the small amount of C-H bonding, the high electrical resistivity, and refractive index n in the range 2-2.46 confirmed the diamond content of the layer. The layers were brittle and their hardness did not exceed 1000 HV. Pulse plasma deposited diamond layers can find applications as surface coatings of anti-abrasive TiN-C composites and passivating layers in semiconductor structures.