MECHANISM OF GA IMPLANTATION-INDUCED INTERMIXING OF GAAS-ALGAAS MATERIAL

被引：15

作者：

HIRAYAMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L162 / L165

页数：4

共 17 条

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].

CIBERT, J ;

PETROFF, PM ;

DOLAN, GJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1275-1277

[2] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[3]

Crank J, 1979, MATH DIFFUSION, DOI [10.1021/ja01562a072, DOI 10.1021/JA01562A072]

[4] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].

DANSAS, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2212-2216

[5] ARSENIC PRESSURE-DEPENDENCE OF INTERDIFFUSION OF ALGAAS/GAAS INTERFACE IN QUANTUM-WELL [J].

FURUYA, A ;

WADA, O ;

TAKAMORI, A ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L926-L928

[6] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

PLANO, WE ;

BURNHAM, RD ;

THORNTON, RL ;

EPLER, JE ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1372-1379

[7] ION-BEAM-INDUCED ATOMIC MIXING [J].

HAFF, PK ;

SWITKOWSKI, ZE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3383-3386

[8] ION-SPECIES DEPENDENCE OF INTERDIFFUSION IN ION-IMPLANTED GAAS-ALAS SUPERLATTICES [J].

HIRAYAMA, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11) :1498-1502

[9] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J].

HIRAYAMA, Y ;

TARUCHA, S ;

SUZUKI, Y ;

OKAMOTO, H .

PHYSICAL REVIEW B, 1988, 37 (05) :2774-2777

[10] ELECTRICAL-PROPERTIES OF GA ION-BEAM IMPLANTED GAAS EPILAYER [J].

HIRAYAMA, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12) :L965-L967

← 1 2 →