LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF BORON DOPED SILICON FILMS

被引：20

作者：

HALL, LH ^{[1
]}

KOLIWAD, KM ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403279

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1438 / 1440

页数：3

共 11 条

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[3]

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[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].

EVERSTEY.FC ;

PUT, BH .

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[5] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[6] RESISTIVITY OF DOPED POLYCRYSTALLINE SILICON FILMS [J].

FRIPP, AL ;

SLACK, LH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :145-146

[7] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

MANOLIU, J ;

TUCKER, RN .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[8]

KAMINS TI, 1971, J APPL PHYS, V22, P4357

[9]

KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314

[10]

Richman D., 1970, RCA Review, V31, P613

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