ANALYTICAL CHARACTERIZATION OF SNO2 THIN-FILMS

被引：7

作者：

ADVANI, GN

JORDAN, AG

KLUGEWEISS, P

机构：

[1] CARNEGIE MELLON UNIV, CTR JOINING MAT, PITTSBURGH, PA 15213 USA

[2] CARNEGIE MELLON UNIV, DEPT MET & MAT SCI, PITTSBURGH, PA 15213 USA

来源：

MATERIALS SCIENCE AND ENGINEERING | 1979年 / 41卷 / 01期

关键词：

D O I：

10.1016/0025-5416(79)90048-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin (400 Å) films of SnO2 prepared by r.f. sputtering were studied by Auger elemental specroscopy and transmision microscopy. Room temperature resistivity measurements were also carried out on all films. The results show that the films were continuous but contained a large number of defects. Variations in grain size were also observed. The lowest resistivity was obtained for the films sputtered in pure oxygen. Auger studies of the films showed a uniform composition in the material extending from the surface to the bulk. The results should be of importance in the study of SnO2/semiconductor heterojunctions for solar cells. © 1979.

引用

页码：99 / 102

页数：4

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