TEMPERATURE EFFECTS ON THE RADIATION RESPONSE OF MOS DEVICES

[1] DOSE-RATE EFFECTS ON TOTAL DOSE DAMAGE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1420 - 1424

[2] SIMULATION OF WORST-CASE TOTAL DOSE RADIATION EFFECTS IN CMOS VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1546 - 1550

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[5] BUMBAUGH ME, 1986, J RAD EFFECTS RES EN, V5, P38

[6] DRESSENDORFER PV, 1983, J RAD EFFECTS RES EN, V2, P347

[7] HIGH-TEMPERATURE SILICON-ON-INSULATOR ELECTRONICS FOR SPACE NUCLEAR-POWER SYSTEMS - REQUIREMENTS AND FEASIBILITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (05) : 1099 - 1112

[8] A SIMPLE METHOD TO IDENTIFY RADIATION AND ANNEALING BIASES THAT LEAD TO WORST-CASE CMOS STATIC RAM POSTIRRADIATION RESPONSE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1408 - 1413

[9] USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1330 - 1336

[10] USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) : 1497 - 1505

[1] DOSE-RATE EFFECTS ON TOTAL DOSE DAMAGE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1420 - 1424

[2] SIMULATION OF WORST-CASE TOTAL DOSE RADIATION EFFECTS IN CMOS VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1546 - 1550

[3] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[4] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[5] BUMBAUGH ME, 1986, J RAD EFFECTS RES EN, V5, P38

[6] DRESSENDORFER PV, 1983, J RAD EFFECTS RES EN, V2, P347

[7] HIGH-TEMPERATURE SILICON-ON-INSULATOR ELECTRONICS FOR SPACE NUCLEAR-POWER SYSTEMS - REQUIREMENTS AND FEASIBILITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (05) : 1099 - 1112

[8] A SIMPLE METHOD TO IDENTIFY RADIATION AND ANNEALING BIASES THAT LEAD TO WORST-CASE CMOS STATIC RAM POSTIRRADIATION RESPONSE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1408 - 1413

[9] USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1330 - 1336

[10] USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) : 1497 - 1505