共 50 条
- [42] Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon P-channel thin film transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (10): : 5894 - 5899
- [43] Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon P-channel thin film transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (10): : 5894 - 5899
- [45] Injection Current Model Fit in p-Channel Floating Gate MOS Transistors Using the Levenberg-Marquardt Method 2013 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE), 2013, : 482 - 487
- [49] STABILITY OF PREVIOUSLY IRRADIATED MOS-TRANSISTORS AT HIGH TEMPERATURE COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1969, 269 (22): : 1146 - &