ROOM-TEMPERATURE INSTABILITIES OF P-CHANNEL SILICON GATE MOS-TRANSISTORS

被引:8
|
作者
NAKAYAMA, H
OSADA, Y
SHINDO, M
机构
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D O I
10.1149/1.2131667
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1302 / 1306
页数:5
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