ROOM-TEMPERATURE INSTABILITIES OF P-CHANNEL SILICON GATE MOS-TRANSISTORS

被引：8

|

作者：

NAKAYAMA, H

OSADA, Y

SHINDO, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期

关键词：

D O I：

10.1149/1.2131667

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1302 / 1306

页数：5

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