ROOM-TEMPERATURE INSTABILITIES OF P-CHANNEL SILICON GATE MOS-TRANSISTORS

被引：8
作者：
NAKAYAMA, H
OSADA, Y
SHINDO, M
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期
关键词：
D O I：
10.1149/1.2131667
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1302 / 1306
页数：5
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