SB-IGFET - AN INSULATED-GATE FIELD-EFFECT TRANSISTOR USING SCHOTTKY BARRIER CONTACTS FOR SOURCE AND DRAIN

被引：98
作者：
LEPSELTER, MP
SZE, SM
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 08期
关键词：
D O I：
10.1109/PROC.1968.6618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1400 / +
页数：1
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