AES AND FACTOR-ANALYSIS STUDY OF SILICIDE GROWTH AT THE PD/C-SI INTERFACE

被引：23
作者：
STEREN, L
VIDAL, R
FERRON, J
机构：
[1] UNIV NACL LITORAL,CONSEJO NACL INVEST CIENT & TECN,INST DESARROLLO TECNOL IND QUIM,RA-3000 SANTA FE,ARGENTINA
[2] NATL UNIV ROSARIO,PELLEGRINI 250,RA-2000 ROSARIO,ARGENTINA
来源：
APPLIED SURFACE SCIENCE | 1987年 / 29卷 / 04期
关键词：
D O I：
10.1016/0169-4332(87)90047-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：418 / 426
页数：9
相关论文
共 13 条
[1]  
ATZRODT V, 1984, PHYS STATUS SOLIDI A, V82, P373, DOI 10.1002/pssa.2210820205
[2]   PRINCIPAL COMPONENT ANALYSIS AS A METHOD FOR SILICIDE INVESTIGATION WITH AUGER-ELECTRON SPECTROSCOPY [J].
ATZRODT, V ;
LANGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (02) :489-496
[3]   INVESTIGATION OF NISI AND PD3SI THIN-FILMS BY AES AND XPS [J].
ATZRODT, V ;
WIRTH, T ;
LANGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02) :531-537
[4]   ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].
Calandra, C. ;
Bisi, O. ;
Ottaviani, G. .
SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364
[5]   PRINCIPAL COMPONENT ANALYSIS OF AUGER LINE-SHAPES AT SOLID-SOLID INTERFACES [J].
GAARENSTROOM, SW .
APPLIED SURFACE SCIENCE, 1981, 7 (1-2) :7-18
[6]   APPLICATION OF AUGER LINE-SHAPES AND FACTOR-ANALYSIS TO CHARACTERIZE A METAL-CERAMIC INTERFACIAL REACTION [J].
GAARENSTROOM, SW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :458-461
[7]   INITIAL FORMATION PROCESS OF METAL SILICON INTERFACES [J].
HIRAKI, A .
SURFACE SCIENCE, 1986, 168 (1-3) :74-99
[8]   PALLADIUM SILICIDE FORMATION UNDER THE INFLUENCE OF NITROGEN AND OXYGEN IMPURITIES [J].
HO, KT ;
LIEN, CD ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :232-236
[9]   BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].
OTTAVIANI, G ;
TU, KN ;
MAYER, JW .
PHYSICAL REVIEW B, 1981, 24 (06) :3354-3359
[10]   APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE [J].
ROTH, JA ;
CROWELL, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1317-1324
12