The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions

被引：2

作者：

Yang, Yi-Lin ^{[1
]}

Zhang, Wenqi ^{[2
]}

Cheng, Chi-Yun ^{[2
]}

Yeh, Andwen-Kuan ^{[2
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 824, Taiwan

[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 824, Taiwan

来源：

ACTIVE AND PASSIVE ELECTRONIC COMPONENTS | 2012年 / 2012卷

关键词：

D O I：

10.1155/2012/872494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.

引用

页数：4

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