GROWTH AND PROPERTIES OF LPE GAAS

[1] ASHLEY KL, 1968 P INT S GAAS SA, P123

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[3] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1593 - &

[4] CARBALLES JC, 1968 P INT S GAAS SA, P28

[5] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[6] HIGH-MOBILITY GALLIUM ARSENIDE GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (01) : 115 - &

[7] GOODWIN AR, 1968 P INT S GAAS SA, P36

[8] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &

[1] ASHLEY KL, 1968 P INT S GAAS SA, P123

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[3] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1593 - &

[4] CARBALLES JC, 1968 P INT S GAAS SA, P28

[5] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[6] HIGH-MOBILITY GALLIUM ARSENIDE GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (01) : 115 - &

[7] GOODWIN AR, 1968 P INT S GAAS SA, P36

[8] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[9] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236

[10] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &