HIGH-PRECISION OPTICAL REFLECTOMETER FOR THE STUDY OF SEMICONDUCTOR-MATERIALS AND STRUCTURES

被引：0

作者：

BELL, MI ^{[1
]}

MCKEOWN, DA ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV SEMICOND ELECTR,GAITHERSBURG,MD 20899

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1990年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.1141912

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The design and performance of a high-precision optical reflectometer are described. This instrument has been optimized for measuring the specular reflectivity of thin films and multilayer structures of interest in semiconductor technology. Its design emphasizes high spectral and spatial resolution, photometric accuracy, and stray light rejection. Use of a spectrometer drive linear in wavenumber (energy) and a flexible data acquisition system facilitates data analysis. The performance of the reflectometer is demonstrated using a set of specimens consisting of silicon-dioxide layers on silicon substrates for which the oxide thicknesses had been determined by ellipsometry. Excellent agreement is obtained between the thicknesses derived from the reflectivity spectra and those determined ellipsometrically.

引用

页码：2542 / 2545

页数：4

共 50 条

[21] CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS AND STRUCTURES BY TRANSMISSION ELECTRON-MICROSCOPY [J].

GRAHAM, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :C373-C373

[22] MODULAR AUTOMATIC-APPARATUS FOR STUDY OF SEMICONDUCTOR-MATERIALS AND STRUCTURES BY ELECTRICAL AND PHOTOELECTRIC MEASUREMENTS [J].

NIKOLOV, L ;

GERMANOVA, K ;

ANGELOV, B ;

TONCHEV, M .

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1991, 34 (05) :1059-1062

[23] DIFFRACTION QUASI-OPTICAL BLOCK FOR INVESTIGATING SEMICONDUCTOR-MATERIALS [J].

ALEKSEEV, EA ;

BELETSKII, NN ;

VERTII, AA ;

IVANCHENKO, IV ;

POPENKO, NA ;

TARAPOV, SI .

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1992, 35 (05) :906-910

[24] SEMICONDUCTOR-MATERIALS FOR HIGH-TEMPERATURE POWER ELECTRONICS [J].

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CHANTE, JP .

ONDE ELECTRIQUE, 1992, 72 (04) :15-19

[25] HIGH-PRECISION ANALYSIS OF FINLINES ON SEMICONDUCTOR SUBSTRATE [J].

FERNANDES, HCC ;

DESOUZA, EAM ;

QUEIROZ, ID .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1995, 16 (01) :185-200

[26] UNIQUE SEMICONDUCTOR-MATERIALS AND STRUCTURES PRODUCED BY LASER AND ELECTRON-BEAMS [J].

BROWN, WL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :734-737

[27] CLOSED-LOOP CONTROL OF GROWTH OF SEMICONDUCTOR-MATERIALS AND STRUCTURES BY SPECTROELLIPSOMETRY [J].

ASPNES, DE ;

QUINN, WE ;

TAMARGO, MC ;

GREGORY, S ;

SCHWARZ, SA ;

PUDENZI, MAA ;

BRASIL, MJSP ;

NAHORY, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :1840-1841

[28] High-precision neuron MOSFET structures [J].

Rantala, A ;

Franssila, S ;

Kaski, K ;

Lampinen, J ;

Åberg, M ;

Kuivalainen, P .

ELECTRONICS LETTERS, 1999, 35 (02) :155-157

[29] SIGNIFICANCE OF HIGH-PRECISION IN ENZYME STRUCTURES [J].

RAMANADHAM, M ;

SIEKER, LC ;

JENSEN, LH .

CURRENT SCIENCE, 1987, 56 (04) :172-173

[30] High-precision testing of brittle materials [J].

ASM International, United States ;

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Advanced Materials and Processes, 1997, 151 (04) :39-40

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