CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY

被引：23

作者：

CHOLEWA, M ^{[1
]}

BENCH, G ^{[1
]}

LEGGE, GJF ^{[1
]}

SAINT, A ^{[1
]}

机构：

[1] UNIV MELBOURNE,SCH PHYS,MICRO ANALYT RES CTR,PARKVILLE,VIC 3052,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50-μm-thick epitaxially grown n-type silicon with 3.9 MeV H+ beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High-resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.

引用

页码：1236 / 1238

页数：3

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