ANALYSIS OF LSA MODE INCLUDING EFFECTS OF SPACE CHARGE AND INTERVALLEY TRANSFER TIME

被引：15
作者：
CURTICE, WR
PURCELL, JJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 12期
关键词：
D O I：
10.1109/T-ED.1970.17125
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1048 / &
相关论文
共 17 条
[1]   MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].
BOARDMAN, AD ;
FAWCETT, W ;
REES, HD .
SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&
[2]   THEORETICAL EFFICIENCY OF LSA MODE FOR GALLIUM ARSENIDE AT FREQUENCIES ABOVE 10GHZ [J].
BUTCHER, PN ;
HEARN, CJ .
ELECTRONICS LETTERS, 1968, 4 (21) :459-+
[3]   EFFECT OF FIELD-DEPENDENT DIFFUSION ON STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W ;
OGG, NR .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (06) :755-&
[4]   CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].
BUTCHER, PN ;
FAWCETT, W .
PHYSICS LETTERS, 1966, 21 (05) :489-&
[5]   LSA OSCILLATOR-DIODE THEORY [J].
COPELAND, JA .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3096-+
[6]   STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].
COPELAND, JA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+
[7]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[8]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&
[9]   MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].
HUTSON, AR ;
JAYARAMAN, AG ;
CHYNOWETH, AG ;
CORIELL, AS ;
FELDMAN, WL .
PHYSICAL REVIEW LETTERS, 1965, 14 (16) :639-+
[10]   DYNAMICS OF HIGH-FIELD PROPAGATING DOMAINS IN BULK SEMICONDUCTORS [J].
KUROKAWA, K .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (10) :2235-+
12