LOW-ENERGY NITROGEN IMPLANTATION INTO SILICON - ITS MATERIAL COMPOSITION, OXIDATION RESISTANCE, AND ELECTRICAL CHARACTERISTICS

被引：20

作者：

CHIU, TY ^{[1
]}

BERNT, H ^{[1
]}

RUGE, I ^{[1
]}

机构：

[1] INST FESTKOERPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 02期

关键词：

D O I：

10.1149/1.2123869

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：408 / 412

页数：5

共 21 条

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[6]

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[8]

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[10] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J].

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