LASING CHARACTERISTICS IN A DEGRADED GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASER

被引：32

作者：

YONEZU, H ^{[1
]}

UENO, M ^{[1
]}

KAMEJIMA, T ^{[1
]}

SAKUMA, I ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,NAKAHARA,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 05期

关键词：

D O I：

10.1143/JJAP.13.835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：835 / 842

页数：8

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[7] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

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[8]

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