CRYSTAL-GROWTH MODEL FOR MOLECULAR-BEAM EPITAXY - ROLE OF KINKS ON CRYSTAL-GROWTH

被引：17

作者：

ISHIZAKA, A ^{[1
]}

MURATA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 45期

关键词：

D O I：

10.1088/0953-8984/6/45/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A simple crystal growth model for molecular beam epitaxy (MBE) is proposed. Based on the common features of various MBE material systems, growth modes are classified as either high-temperature growth or low-temperature growth. The transition temperature between the two growth modes is found to be a characteristic value: half the melting temperature (T(m)) of each material. The incorporation of growing atoms on the crystal surface is discussed based on a crystal surface model composed of kinks, ledges, and terraces. At temperatures higher than 1/2 T(m), kinks act as incorporation and decomposition sites for growing atoms, and the shape of the growth front step is simple and smooth. At temperatures lower than 1/2 T(m), kinks act only as pinning sites with a zigzag step.

引用

页码：L693 / L698

页数：6

共 12 条

[1] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[2] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ICHIKAWA, M ;

DOI, T .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143

[3] SYSTEMATIC CHANGE IN SURFACE-STRUCTURES ON SI(111) CLEAN SURFACES WITH TEMPERATURE [J].

ISHIZAKA, A ;

DOI, T .

PHILOSOPHICAL MAGAZINE LETTERS, 1992, 65 (02) :95-100

[4] GROWTH MODE TRANSITIONS IN SI MOLECULAR-BEAM EPITAXY ON (100) AND (111) SUBSTRATE SURFACES [J].

ISHIZAKA, A .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 64 (02) :219-232

[5] GROWTH MODES OF MBE AND SPE IN THE HETEROEPITAXY OF A NISI2 LAYER ON SI(111) SUBSTRATE [J].

ISHIZAKA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06) :883-891

[6] KINETICS OF ORDERED GROWTH OF SI ON SI(100) AT LOW-TEMPERATURES [J].

JORKE, H ;

HERZOG, HJ ;

KIBBEL, H .

PHYSICAL REVIEW B, 1989, 40 (03) :2005-2008

[7] THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES [J].

JOYCE, BA ;

DOBSON, PJ ;

NEAVE, JH ;

ZHANG, J .

SURFACE SCIENCE, 1986, 174 (1-3) :1-9

[8]

KOSSEL W, 1927, NACHR AKAD WISS GO K, V1, P135

[9] EFFECTS OF VERY LOW GROWTH-RATES ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].

METZE, GM ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :818-820

[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

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