DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALING

被引：11

作者：

SHENG, NH

MIZUTA, M

MERZ, JL

机构：

来源：

关键词：

D O I：

10.1063/1.92928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 70

页数：3

共 15 条

[11] COMPARISON OF CW LASER-ANNEALED AND ELECTRON-BEAM ANNEALED SI [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL .

[12] DEFECTS IN LASER DAMAGED SILICON OBSERVED BY DLTS [J].

MOONEY, PM ;

YOUNG, RT ;

KARINS, J ;

LEE, YH ;

CORBETT, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :K31-K34

[13]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

[14]

ROZGONYI GA, 1981, ELECTRON BEAM SOLID, P193

[15]

Sheng N. H., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P155