DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALING

被引：11

作者：

SHENG, NH

MIZUTA, M

MERZ, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.92928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 70

页数：3

共 15 条

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[10] ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICON [J].

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