RECOMBINATION IN NANOPHASE TIO2 FILMS

被引:31
作者
KONENKAMP, R
HENNINGER, R
机构
[1] Hahn-Meitner-Institut, Berlin, D-14109, Glienicker Strasse
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 01期
关键词
72.40; 73.60; 81.15;
D O I
10.1007/BF00331523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recombination and transport parameters were determined in Schottky diodes made of thin TiO2 solgel films with particle size around 50 nm. Effective recombination times are typically in the range, 10 mus < tau < 1 ms, depending on injection level. The lifetimes are found to decrease at higher current levels, indicating bimolecular recombination kinetics due to a progressive increase in trap occupation. The mobility-lifetime product is estimated to be approximately 5 X 10(-11) cm2/V and is independent of current level.
引用
收藏
页码:87 / 90
页数:4
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