THERMAL-DISSOCIATION OF AIIBIVAS2 COMPOUNDS

被引：0

作者：

GLAZOV, VM

LEBEDEV, VV

MOLODYK, AD

PASHINKIN, AS

机构：

来源：

INORGANIC MATERIALS | 1979年 / 15卷 / 10期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1363 / 1367

页数：5

共 14 条

[1] SYNTHESIS AND LAYER GROWTH OF ZINC SILICON ARSENIDE, ZNSIAS2, BY CHEMICAL VAPOR-DEPOSITION IN AN OPEN FLOW SYSTEM [J].

ANDREWS, JE ;

SCHREINER, AF ;

BENSON, RB ;

CHEVACHAROENKUL, S ;

DUNCAN, WM ;

HARRISON, JW ;

HAUSER, JR ;

LITTLEJOHN, MA .

MATERIALS RESEARCH BULLETIN, 1977, 12 (10) :961-968

[2]

ANTONOVA NL, 1973, NAUCNYE T GIREDMET, V56, P80

[3]

BONDAR SA, 1972, ELEKTRONNAYA TEKHNIK, P138

[4]

BORSHEVSKII AS, 1971, ELEKTRONNAYA TEKHNIK, P56

[5]

GLAZOV VM, 1973, ELEKTRONNAYA TEKHNIK, P71

[6]

GLAZOV VM, 1974, ELEKTRONNAYA TEKHNIK, P86

[7]

GORYUNOVA NA, 1968, COMPOUND DIAMOND LIK, P128

[8]

GORYUNOVA NA, 1971, MIKROELEKTRONIKA SOL, P152

[9]

GUTBIER H, 1961, Z NATURFORSCH PT A, V16, P268

[10]

KOPANSKAYA LS, 1970, INVESTIGATION COMPOU, P118

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