NOVEL PROCESS FOR INTEGRATION OF OPTOELECTRONIC DEVICES USING REACTIVE ION ETCHING WITHOUT CHLORINATED GAS

被引：64

作者：

HENRY, L ^{[1
]}

VAUDRY, C ^{[1
]}

GRANJOUX, P ^{[1
]}

机构：

[1] ALCATEL CIT,DIV IND,F-92240 MALAKOFF,FRANCE

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

DRY ETCHING - ETCHING GAS - III-V COMPOUND SEMICONDUCTORS - MICRO-OPTOELECTRONIC TECHNOLOGY - REACTIVE ION ETCHING;

D O I：

10.1049/el:19870870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1253 / 1254

页数：2

共 9 条

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[2]

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[6]

Niggebrugge U., 1985, I PHYS C SER, V79, P367

[7] REACTIVE ION ETCHING OF GAAS AND INP USING SICL4 [J].

STERN, MB ;

LIAO, PF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1053-1055

[8] HIGH-POWER ETCHED-FACET LASERS [J].

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[9]

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