BARUO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION

被引：7
|
作者：
XU, WP
ZHENG, LR
XIN, HP
LIN, CL
GU, M
CAO, ZC
OKUYAMA, M
机构：
[1] SHANGHAI UNIV,FAC MAT,JIADING 201800,PEOPLES R CHINA
[2] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN
来源：
MATERIALS LETTERS | 1995年 / 25卷 / 3-4期
关键词：
D O I：
10.1016/0167-577X(95)00160-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High electrical conductive BaRuO3 thin films with (110) perovskite orientation have been successfully fabricated on Si(100) substrates by pulsed ArF excimer laser deposition and post-annealing. The resistivity of the films at room temperature is in the range of 10(-2)-10(-3) Ohm cm. Auger electron spectroscopy (AES) measurement shows that the compositions uniformly distributed throughout the film. Rutherford backscattering spectroscopy (RES) analysis indicates that the chemical stoichiometric ratio is well consistent with the ideal one as in BaRuO3.
引用
收藏
页码：175 / 178
页数：4
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