DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS

The problem of doping in II-VI semiconductors is examined using an ab initio pseudopotential approach with emphasis on ZnSe, ZnTe, MgSe, and zinc blende MgTe. The n-type doping of ZnTe and MgTe is found to be hindered by the formation of localized DX-like deep donor centers. DX centers are found to be energetically unfavorable in ZnSe and MgSe. The possibility of obtaining large-band-gap MgZnSeTe semiconductor alloys that can be doped low-resistance n and p type is discussed.